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IRF3711S Dataheets PDF



Part Number IRF3711S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3711S DatasheetIRF3711S Datasheet (PDF)

PD- 94062D SMPS MOSFET IRF3711 IRF3711S IRF3711L Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 6.0mΩ 110A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche V.

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PD- 94062D SMPS MOSFET IRF3711 IRF3711S IRF3711L Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 6.0mΩ 110A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range D2Pak IRF3711S Max. 20 ± 20 110† 69 440 120 3.1 0.96 -55 to + 150 TO-262 IRF3711L Units V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case ‡ Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„‡ Junction-to-Ambient (PCB mount)…‡ Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through ‡ are on page 11 www.irf.com 1 12/9/04 IRF3711/3711S/3711L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) ––– Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 1.0 ––– IDSS Drain-to-Source Leakage Current ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– ––– ––– 0.022 ––– 4.7 6.0 6.2 8.5 ––– 3.0 ––– 20 ––– 100 ––– 200 ––– -200 V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A ƒ VGS = 4.5V, ID = 12A ƒ V VDS = VGS, ID = 250µA µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C nA VGS = 16V VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 53 ––– ––– S VDS = 16V, ID = 30A ––– 29 44 ID = 15A ––– 7.3 ––– nC VDS = 10V ––– 8.9 ––– VGS = 4.5V ––– 33 ––– VGS = 0V, VDS = 10V 0.3 ––– 2.5 Ω ––– 12 ––– ns VDD = 10V ––– 220 ––– ID = 30A ––– 17 ––– RG = 1.8Ω ––– 12 ––– VGS = 4.5V ƒ ––– 2980 ––– VGS = 0V ––– 1770 ––– pF VDS = 10V ––– 280 ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 Min. ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– 0.88 0.82 50 61 48 65 Max. Units 110† A 440 1.3 V ––– 75 ns 92 nC 72 ns 98 nC Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = 30A, VGS = 0V ƒ TJ = 125°C, IS = 30A, VGS = 0V ƒ TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs ƒ www.irf.com I D, Drain-to-Source Current (A) IRF3711/3711S/3711L 1000 VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 2.7V 10 0.1 20µs PULSE WIDTH TJ= 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics I D, Drain-to-Source Current (A) 1000 VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 2.7V 10 0.1 20µs PULSE WIDTH TJ= 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 1000 100 TJ = 25°C TJ = 150° C 10 2.0 V DS= 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 110A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3711/3711S/3711L C, Capacitance(pF) 100000 10000 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs +.


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