Document
PD- 94062D
SMPS MOSFET
IRF3711 IRF3711S IRF3711L
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
ID
6.0mΩ
110A
Benefits l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRF3711
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C
TJ , TSTG
Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
D2Pak IRF3711S
Max. 20
± 20 110
69 440 120 3.1 0.96 -55 to + 150
TO-262 IRF3711L
Units V V
A
W W W/°C °C
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ. ––– 0.50 ––– –––
Max. 1.04 ––– 62 40
Units °C/W
Notes through are on page 11 www.irf.com
1
12/9/04
IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
––– Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
1.0
–––
IDSS
Drain-to-Source Leakage Current
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– ––– 0.022 –––
4.7 6.0 6.2 8.5 ––– 3.0 ––– 20 ––– 100 ––– 200 ––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
53 ––– ––– S VDS = 16V, ID = 30A
––– 29 44
ID = 15A
––– 7.3 ––– nC VDS = 10V
––– 8.9 –––
VGS = 4.5V
––– 33 –––
VGS = 0V, VDS = 10V
0.3 ––– 2.5 Ω
––– 12 ––– ns VDD = 10V
––– 220 –––
ID = 30A
––– 17 –––
RG = 1.8Ω
––– 12 –––
VGS = 4.5V
––– 2980 –––
VGS = 0V
––– 1770 ––– pF VDS = 10V
––– 280 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol EAS IAR
Parameter Single Pulse Avalanche Energy Avalanche Current
Typ. ––– –––
Max. 460 30
Units mJ A
Diode Characteristics
Symbol IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
–––
–––
––– ––– ––– ––– ––– –––
Typ.
–––
–––
0.88 0.82 50 61 48 65
Max. Units
110 A
440
1.3 V ––– 75 ns 92 nC 72 ns 98 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 30A, VGS = 0V TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs
TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs
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I D, Drain-to-Source Current (A)
IRF3711/3711S/3711L
1000
VGS TOP 15V
10V 4.5V
3.7V 3.5V
3.3V 3.0V
BOTTOM 2.7V
100
2.7V
10 0.1
20µs PULSE WIDTH TJ= 25 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000
VGS
TOP 15V 10V 4.5V
3.7V 3.5V
3.3V 3.0V BOTTOM 2.7V
100
2.7V
10 0.1
20µs PULSE WIDTH TJ= 150 °C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000 100
TJ = 25°C TJ = 150° C
10 2.0
V DS= 25V 20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 110A
1.5
1.0
0.5
VGS = 10V 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature 3
IRF3711/3711S/3711L
C, Capacitance(pF)
100000 10000 1000
VGS = 0V, f = 1 MHZ Ciss = Cgs +.