Power MOSFET
PD- 94062D
SMPS MOSFET
IRF3711 IRF3711S IRF3711L
Applications l High Frequency Isolated DC-DC
Converters with Synchro...
Description
PD- 94062D
SMPS MOSFET
IRF3711 IRF3711S IRF3711L
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
ID
6.0mΩ
110A
Benefits l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRF3711
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C
TJ , TSTG
Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
D2Pak IRF3711S
Max. 20
± 20 110
69 440 120 3.1 0.96 -55 to + 150
TO-262 IRF3711L
Units V V
A
W W W/°C °C
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ. ––– 0.50 ––– –––
Max. 1.04 ––– 62 40
Units °C/W
Notes through are on page 11 www.irf.com
1
12/9/04
IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
∆V(BR)DSS/∆TJ Breakdown Voltage Te...
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