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IRF3710S Dataheets PDF



Part Number IRF3710S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3710S DatasheetIRF3710S Datasheet (PDF)

IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

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IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak TO-262 IRF3710SPbF IRF3710LPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V‡ Continuous Drain Current, VGS @ 10V‡ Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ‡ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 57 40 180 200 1.3 ± 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V A mJ V/ns °C Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)** Typ. ––– ––– Max. 0.75 40 Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2013 IRF3710S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance EAS Single Pulse Avalanche Energy‚‡ Min. Typ. Max. Units Conditions 100 ––– ––– V VGS = 0V, ID = 250µA ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA‡ ––– ––– 23 mΩ VGS = 10V, ID =28A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 32 ––– ––– S VDS = 25V, ID = 28A„‡ ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C ––– ––– 100 nA VGS = 20V ––– ––– -100 VGS = -20V ––– ––– 130 ID = 28A ––– ––– 26 nC VDS = 80V ––– ––– 43 VGS = 10V, See Fig. 6 and 13‡ ––– 12 ––– VDD = 50V ––– 58 ––– ns ID = 28A ––– 45 ––– RG = 2.5Ω ––– 47 ––– VGS = 10V, See Fig. 10 „‡ Between lead, D ––– 4.5 ––– 6mm (0.25in.) nH from package G ––– 7.5 ––– and center of die contact S ––– 3130 ––– VGS = 0V ––– 410 ––– VDS = 25V ––– 72 ––– pF ƒ = 1.0MHz, See Fig. 5‡ ––– 1060…280† mJ IAS = 28A, L = 0.70mH Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS=10V. (See Figure 12). ƒ ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 57 A showing the integral reverse G ––– ––– 230 p-n junction diode. S ––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V „ ––– 140 220 ns TJ = 25°C, IF = 28A ––– 670 1010 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Uses IRF3710 data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended fo.


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