IRF3709

PD - 94071 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG IRF3709 IRF3709S IRF3709L HEXFET® Power MOSFET VDSS 30V RDS(on) max 9.0mΩ ID 90A† TO-220AB IRF3709 D2Pak IRF3709S TO-262 IRF3709L Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 20 90† 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 02/20/01 IRF3709/3709S/3709L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 –...