IRF3706S

PD - 93936A SMPS MOSFET IRF3706 IRF3706S IRF3706L HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l VDSS 20V RDS(on) max 8.5mΩ ID 77A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 IRF3706L Absolute Maximum Ratings Symbol VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 20 ± 12 77 54 280 88 44 0.59 -55 to + 175 Units V V A W W W/°C °C = 25°C = 100°C = 25°C = 100°C TJ , TSTG Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.7 ––– 62 40 Units °C/W Notes  through … are on page 11 www.irf.com 1 7/5/00 IRF3706/3706S/3706L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leaka...