Power MOSFET
PD - 93918
SMPS MOSFET
IRF3703
HEXFET® Power MOSFET
Applications l Synchronous Rectification l Active ORing Benefits ...
Description
PD - 93918
SMPS MOSFET
IRF3703
HEXFET® Power MOSFET
Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated
VDSS
30V
RDS(on) max
2.8mΩ
ID
210A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max. 210 100
1000 230 3.8 1.5 ± 20 5.0 -55 to + 175
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.5 –––
Max.
0.65 ––– 62
Units
°C/W
Notes through are on page 8
www.irf.com
1
02/27/01
IRF3703
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 2.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 2.3 2.8 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.8 VGS = 10V, ID = 76A mΩ 3.9 VGS = 7.0V, ID = 76A ...
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