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IRF3515L Dataheets PDF



Part Number IRF3515L
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3515L DatasheetIRF3515L Datasheet (PDF)

PD- 91899B SMPS MOSFET IRF3515S IRF3515L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS 150V RDS(on) max 0.045Ω ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l D2 Pak IRF3515S TO-262 IRF3515L Absolute Maximum Ratin.

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PD- 91899B SMPS MOSFET IRF3515S IRF3515L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS 150V RDS(on) max 0.045Ω ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l D2 Pak IRF3515S TO-262 IRF3515L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 41 29 164 200 1.3 ± 30 4.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies l Telcom 48V input DC/DC Active Clamp Reset Forward Converter Notes  through … are on page 10 www.irf.com 1 10/28/99 IRF3515S/L Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.21 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.045 Ω VGS = 10V, ID = 25A „ 4.5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 17 120 34 63 2260 530 170 3330 230 280 Max. Units Conditions ––– S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 75V ––– ID = 25A ns ––– RG = 2.5Ω ––– RD = 3.0Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 670 25 20 Units mJ A mJ Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)* Typ. ––– ––– Max. 0.75 40 Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 41 ––– ––– showing the A G integral reverse ––– ––– 164 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „ ––– 200 300 ns TJ = 25°C, IF = 25A ––– 1.6 2.4 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF3515S/L 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10 1 5.0V 20µs PULSE WIDTH TJ = 175 °C 1 10 100 5.0V 0.1 0.1 1 20µs PULSE WIDTH TJ = 25 °C 10 100 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 ID = 41A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 100 2.0 TJ = 175 ° C 1.5 10 1.0 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 4 6 8 10 12 14 0.5 1 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3515S/L 100000 20 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + C gd ID = 25A VDS = 120V VDS = 75V VDS = 30V VGS , Gate-to-Source Voltage (V) 16 C, Capacitance(pF) 10000 12 Ciss 1000 8 Coss Crss 100 1 10 100 4 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on).


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