Document
PD- 91899B
SMPS MOSFET
IRF3515S IRF3515L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching
l
VDSS
150V
RDS(on) max
0.045Ω
ID
41A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001)
l
D2 Pak IRF3515S
TO-262 IRF3515L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
41 29 164 200 1.3 ± 30 4.3 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies
l
Telcom 48V input DC/DC Active Clamp Reset Forward Converter
Notes
through
are on page 10
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1
10/28/99
IRF3515S/L
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 150 ––– ––– 3.0 ––– ––– ––– –––
Typ. ––– 0.21 ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.045 Ω VGS = 10V, ID = 25A 4.5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 17 120 34 63 2260 530 170 3330 230 280 Max. Units Conditions ––– S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See Fig. 6 and 13 ––– VDD = 75V ––– ID = 25A ns ––– RG = 2.5Ω ––– RD = 3.0Ω,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
670 25 20
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
––– –––
Max.
0.75 40
Units
°C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 41 ––– ––– showing the A G integral reverse ––– ––– 164 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V ––– 200 300 ns TJ = 25°C, IF = 25A ––– 1.6 2.4 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3515S/L
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
1
5.0V
20µs PULSE WIDTH TJ = 175 °C
1 10 100
5.0V
0.1 0.1 1
20µs PULSE WIDTH TJ = 25 °C
10 100
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 41A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
100
2.0
TJ = 175 ° C
1.5
10
1.0
TJ = 25 ° C
V DS = 50V 20µs PULSE WIDTH 4 6 8 10 12 14
0.5
1
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF3515S/L
100000 20 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + C gd
ID = 25A VDS = 120V VDS = 75V VDS = 30V
VGS , Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
10000
12
Ciss
1000
8
Coss Crss
100 1 10 100
4
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on).