IRF2805L

PD - 94428 AUTOMOTIVE MOSFET Typical Applications ● ● ● ● IRF2805S IRF2805L HEXFET® Power MOSFET D Climate Control ABS Electronic Braking Windshield Wipers Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Features ● ● ● ● ● VDSS = 55V G S RDS(on) = 4.7mΩ ID = 135AV Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRF2805S TO-262 IRF2805L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Single Pulse Avalanche Energy Tested ValueX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 135V 96V 700 200 1.3 ± 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300...