IRF250

IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA09295. Features 30A, 200V rDS(ON) = 0.085Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF250 PACKAGE TO-204AE BRAND IRF250 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AE TOP VIEW DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF250 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF250 200 200 30 19 120 ±20 150 1.2 910 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Vo...