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IRF244 Dataheets PDF



Part Number IRF244
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRF244 DatasheetIRF244 Datasheet (PDF)

Semiconductor IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, .

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Semiconductor IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. January 1998 Features • 14A and 13A, 275V and 250V • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250V DC Rated - 120V AC Line System Operation • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF244 IRF245 IRF246 IRF247 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF244 IRF245 IRF246 IRF247 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 2209.2 5-1 IRF244, IRF245, IRF246, IRF247 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF244 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg 250 250 14 8.8 56 ±20 125 1.0 550 -55 to 150 300 260 IRF245 250 250 13 8.0 52 ±20 125 1.0 550 -55 to 150 300 260 IRF246 275 275 14 8.8 56 ±20 125 1.0 550 -55 to 150 300 260 IRF247 275 275 13 8.0 52 ±20 125 1.0 550 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250µA (Figure 10) MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF244, IRF245 IRF246, IRF247 Gate to Threshold Voltage Zero-Gate Voltage Drain Current 250 275 - 4.0 25 250 V V V µA µA VGS(TH) IDSS VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC 2.0 - On-State Drain Current (Note 2) IRF244, IRF246 IRF245, IRF247 Gate to Source Leakage Current Drain to Source On-State Resistance (Note 2) IRF244, IRF246 IRF245, IRF247 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 14 13 ±100 A A nA IGSS rDS(ON) VGS = ±20V VGS = 10V, ID = 8A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS ≥ 50V, ID = 8A, (Figure 12) VDD = 125V, ID ≈ 14A, RG = 9.1Ω, RL = 8.9Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 Ω Ω S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRF244, IRF245, IRF246, IRF247 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and .


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