Document
Semiconductor
IRF234, IRF235, IRF236, IRF237
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17413.
January 1998
Features
• 8.1A and 6.5A, 275V and 250V • rDS(ON) = 0.45Ω and 0.68Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250V DC Rated - 120V AC Line System Operation • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER IRF234 IRF235 IRF236 IRF237 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF234 IRF235 IRF236 IRF237
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1997
File Number
2208.3
5-1
IRF234, IRF235, IRF236, IRF237
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF234 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 250 250 8.1 5.1 32 ±20 75 0.6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 ±20 75 0.6 180 -55 to 150 300 260 IRF236 275 275 8.1 5.1 32 ±20 75 0.6 180 -55 to 150 300 260 IRF237 275 275 6.5 4.1 26 ±20 75 0.6 180 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ
oC oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This.