IRF230

IRF230 TO–3 (TO–204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 – Gate Pin 2 – Source 0.97 (0.060) 1.10 (0.043) Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VDGR ID ID IDM VGS PD ILM EAS* TJ , TSTG TL Drain – Source Voltage1 Drain - Gate Voltage (RGS = 20KW)1 Continuous Drain Current@ Tcase = 25°C Continuous Drain Current@ Tcase = 100°C Pulsed Drain Current 3 Gate – Source Voltage Maximum Power Dissipation @ Tcase = 25°C Derate Linearly Inductive Current Clamped Single Pulse Avalanche energy Rating 4 200 200 9.0 6.0 36 ±20 75 0.6 36 150 –55 to 150 300 V V A A A V W W/°C A mj °C °C Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. THERMAL CHARACTERISTICS Characteristic RqJC RqCS RqJA NOTES 1 TJ = +25°C to + 150°C 2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2% 3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature. 4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A Junction to Case Case to Sink (Mounting Surface flat, smooth and greased. Junction to Ambient (Free air operation) 0.1 30 Min. Typ. Max. Unit 1.67 °C/W Semela...