AUTOMOTIVE MOSFET
PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Proces...
Description
PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 55V RDS(on) = 7.5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A
TO-220AB IRF1010Z
D2Pak IRF1010ZS Max.
94 66 75 360 140
TO-262 IRF1010ZL Units
A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested )
W W/°C V mJ A mJ
d
0.90 ± 20
IAR EAR TJ TSTG
Avalanche Current
Ã
h
130 180 See Fig.12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage Temperatu...
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