IR53HD420-P2

Preliminary Data Sheet No. PD60140J IR53H(D)420(-P2) SELF-OSCILLATING HALF BRIDGE Features Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient deadtime 15.6V zener clamped Vcc for offline operation Half-bridge output is out of phase with RT True micropower startup Shutdown feature (1/6th VCC) on CT lead Increased undervoltage lockout hysteresis (1Volt) Lower power level-shifting circuit Lower di/dt gate drive for better noise immunity Excellent latch immunity on all inputs and outputs ESD protection on all leads Constant VO pulse width at startup Heatsink package version (P2 type) Product Summary VIN (max) Duty Cycle Deadtime (type.) Rds(on) 500V 50% 1.2µs 3.0Ω PD (TA = 25oC) 2.0W or 3.0W Package Description The IR53H(D)420(-P2) are complete high voltage, high speed, self-oscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Pro...