IR51H737

Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51H737 SELF-OSCILLATING HALF-BRIDGE Features n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT f = Description The IR51H737 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 300 volts. Package IR51H737 9506 Typical Connection U P V IN T O 3 0 0 V D C B U S IR 5 1 H 7 3 7 1 V C C V B 6 2 R T V IN 9 R T 3 C T V O 7 C T...