HIGH AND LOW SIDE DRIVER
Data Sheet No. PD-6.074
IR2110L6
HIGH AND LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for b...
Description
Data Sheet No. PD-6.074
IR2110L6
HIGH AND LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs
Absolute Maximum Ratings
VOFFSET IO+/VOUT
ton/off (typ.) Delay Matching
600V max. 2A / 2A 10 - 20V
120 & 94 ns 10 ns
Description
The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissip...
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