IR2110E6

Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 2A / 2A 10 - 20V 120 & 94 ns 10 ns Description The IR2110E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM...