IR2104S

Data Sheet No. PD60046-S IR2104(S) & (PbF) HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Internally set deadtime High side output in phase with input Shut down input turns off both channels Matched propagation delay for both channels Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 130 mA / 270 mA 10 - 20V 680 & 150 ns 520 ns Packages Description The IR2104(S) are high voltage, high speed power 8 Lead SOIC MOSFET and IGBT drivers with dependent high and low 8 Lead PDIP IR2104S side referenced output channels. Proprietary HVIC and IR2104 latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. Typical Connection up to 600V VCC VCC IN SD VB HO VS LO TO LOAD IN SD COM (Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical connections only. Please refer to our Application No...