IPS04N03LA

IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Product Summary V DS R DS(on),max (SMD version) ID 25 3.8 50 V mΩ A Type IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Package Ordering Code Marking P-TO252-3-11 Q67042-S4177 04N03LA P-TO252-3-23 Q67042-S4197 04N03LA P-TO251-3-11 Q67042-S4243 04N03LA P-TO251-3-21 Q67042-S4198 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=40 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 890 6 ±20 115 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.8 page 1 2004-05-19 IPD04N03LA IPS04N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Ga...