IPS042G

Data Sheet No.PD 60153-J IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.5µs Description The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Package 8-Lead SOIC Typical Connection Load R in series (if needed) Q D IN control S S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS042G 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source volt...