IPI09N03LA

OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant IPI09N03LA, IPP09N03LA Product Summary V DS R DS(on),max ID 25 V 9.2 mΩ 50 A PG-TO262-3-1 PG-TO220-3-1 Type IPI09N03LA IPP09N03LA Package PG-TO262-3-1 PG-TO220-3-1 Marking 09N03LA 09N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current I D,pulse T C=25 °C3) Avalanche energy, single pulse E AS I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Rev. 1.91 page 1 Value 50 46 350 75 6 ±20 63 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-29 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) IPI09N03LA, IPP09N03LA min. Values typ. Unit max. - - 2.4 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static c...