IPB03N03LA

IPB03N03LA IPI03N03LA, IPP03N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 2.7 80 V mΩ A P-TO262-3-1 P-TO220-3-1 Type IPB03N03LA IPI03N03LA IPP03N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4178 Q67042-S4180 Q67042-S4179 Marking 03N03LA 03N03LA 03N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 80 80 385 960 6 ±20 150 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.3 page 1 2003-12-18 IPB03N03LA IPI03N03LA, IPP03N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Ze...