KSC5242

KSC5242 KSC5242 Audio Power Amplifier High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissipation Wide S.O.A Complement to KSA1962 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 230 230 5 10 1.5 100 150 - 50 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob * Pulse Test : PW=20us Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz Min. 230 230 5 Typ. Max. Units V V V 5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160 uA uA V V MHz pF hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 ©2000 Fairchild Semiconductor International Rev. B, Noverber 2000 KSC5242 Typical Cha...