IXTK82N25P

PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P&TO-264) TO-268 TO-3P TO-264 Maximum Ratings 250 250 V V 20 V 30 V 82 A 75 A 200 A 500 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4.0 g 5.5 g 10.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 V VGS(th) VDS = VGS, ID = 250μA 2.5 5.0 V IGSS VGS = 20V, VDS = 0V100 nA IDSS VDS = VDSS, VGS = 0V TJ = 125C 25 A 250 A RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 38 m TO-268 (IXTT) G S D (Tab) TO-3P( IXTQ) G D S TO-264 (IXTK) D (Tab) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls ©...