Document
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.)
IRLW/I630A
BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 200 9 5.7 32 ±20 54 9 6.9 5 3.1 69 0.55 - 55 to +150
Units V A A V mJ A mJ V/ns W W W/°C
°C 300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.81 40 62.5 °C/W Units
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
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IRLW/I630A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 200 -1.0 -----------------0.18 ------4.5 580 90 44 8 6 30 9 18.6 3.5 8.3 --2.0 100 -100 10 100 0.4 -755 115 55 25 20 70 30 27 --nC ns pF µA Ω Ω V V nA
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Test Condition VGS=0V,ID=250µA
V/° C ID=250µA VGS=20V VGS=-20V VDS=200V
See Fig 7
VDS=5V,ID=250µA
VDS=160V,TC=125°C VGS=5V,ID=4.5A VDS=40V,ID=4.5A
(4) (4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=9A, RG=6Ω
See Fig 13
VDS=160V,VGS=5V, ID=9A
(4) (5)
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)
Min. Typ. Max. Units --------158 0.78 9 32 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=9A,VGS=0V TJ=25°C,IF=9A diF/dt=100A/µs
(4)
Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=1mH, IAS=9A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 9A, di/dt ≤ 220A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µ s, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature
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Fig 1. Output Characteristics
V Top :
1 1 0
GS
IRLW/I630A
Fig 2. Transfer Characteristics
7.0V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V
ID , Drain Current [A]
Bottom : 3.0V
ID , Drain Current [A]
5.5 V
1 1 0
1 5 0 oC
0 1 0
1 0
0
2 5 oC
-1 1 0 -1 1 0
@N o t e s: 1 .2 5 0 µs P u l s eT e s t 2 .T =2 5 oC C
0 1 0 1 1 0
-5 5 oC
-1 1 0
@N o t e s: 1 .V GS = 0 V 2 .V 0V DS = 4 3 .2 5 0 µs P u l s eT e s t 6 8 1 0
0
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
1 . 0 0
Fig 3. On-Resistance vs. Drain Current
IDR , Reverse Drain Current [A]
Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance
0 . 7 5 V =5 V GS 0 . 5 0
1 1 0
RDS(on) , [ Ω ]
0 1 0
0 . 2 5
V =1 0V
GS
1 5 0 oC 2 5 C
-1 1 0 0 . 4 o
@N o t e :T =2 5 C J 0 . 0 0 0 5 1 0
D
o
@N o t e s: 1 .V GS = 0 V u l s eT e s t 2 .2 5 0 µs P 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8
1 5
2 0
2 5
3 0
0 . 6
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
9 0 0 C h o r t e d) iss= C gs+ C gd ( C ds= s C oss= C ds+ C gd C rss= C gd 6
Fig 6. Gate Charge vs. Gate-Source Voltage
7 2 0
C iss
V =4 0V
VGS , Gate-Source Voltage [V]
DS
Capacitance [pF]
V =1 0 0V DS 4 V =1 6 0V DS
5 4 0
3 6 0
C oss
1 8 0
C rss
@N o t e s: 1 .V GS = 0 V 2 . f =1 M H z
2
@N o t e s: I =9 A D 0 0 4
G
0 0 1 0
1 0
1
8
1 2
1 6
2 0
VDS , Drain-Source Voltage [V]
Q , Total Gate Charge [nC]
IRLW/I630A
Fig 7. Breakdown Voltage vs. Temperature
1 . 2 3 . 0
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Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage
1 . 1
RDS(on) , (Normalized) Drain-Source On-Resistance
2 . 5
BVDSS , (Normalized)
2 . 0
1 . 0
1 . 5
1 . 0 @N o t e s: 1 .V GS = 5 V 2 .I . 5A D =4 5 0 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
0 . 9
@N o t e s: =0 V 1 .V GS .