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IRLR220A
ADVANCED POWER MOSFET
Description
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRLR/U220A BVDSS = 200 V RDS(on) = 0.8Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source ...
Fairchild Semiconductor
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