DatasheetsPDF.com

AN957

Part Number	AN957
Manufacturer	ETC
Description	Measuring HEXFETCharacteristics
Published	Apr 16, 2005
Detailed Description	Index AN-957 (v.Int) Measuring HEXFET®Characteristics (HEXFET is the trademark for International Rectifier Power MOSFET...
Datasheet	AN957 PDF File

Overview

Index AN-957 (v.
Int) Measuring HEXFET®Characteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs P-Channel HEXFET Power MOSFETs Initial settings Breakdown Drain leakage Gate threshold Gate leakage Transconductance On-resistance Diode drop Characteristics in synchronous rectification Transfer characteristics Measurements without a curve tracer Device capacitances Switching times Gate charge Reverse recovery A fixture to speed-up testing time Related topics 1.
General Curve tracers have generally been designed for making measurements on bipolar transistors.
Whi...

Similar Datasheet

AN904 MAGNETIC AMPLIFIER - STMicroelectronics
AN908 APPLICATION NOTE - ST Microelectronics
AN90B00 Transistor Arrays - Panasonic Semiconductor
AN90B01S Transistor Arrays - Panasonic Semiconductor
AN90B10 Transistor Arrays - Panasonic Semiconductor
AN90B10S Transistor Arrays - Panasonic Semiconductor
AN90B20 Transistor Arrays - Panasonic Semiconductor
AN90B20S Transistor Arrays - Panasonic Semiconductor
AN90B21 Transistor Arrays - Panasonic Semiconductor
AN90B21S Transistor Arrays - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)