N-Channel Silicon MOSFET
Ordering number : ENN6600
Preliminary Features
• Low ON resistance. • 4V-drive. • Ultrahigh-spped switching.
2SK3279
N...
Description
Ordering number : ENN6600
Preliminary Features
Low ON resistance. 4V-drive. Ultrahigh-spped switching.
2SK3279
N-Channel Silicon MOSFET
2SK3279
DC/DC Converter Applications
Package Dimensions
unit : mm 2083B
[2SK3279] 6.5 5.0 4
2.3 0.5
5.5 1.5 7.0
0.85 0.7
0.6 12 3
2.3 2.3
0.8 1.6 7.5
1.2
0.5
1 : Gate 2 : Drain 3 : Source 4 : Drain
SANYO : TP
unit : mm 2092B
6.5 5.0 4
[2SK3279]
2.3 0.5
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
2.3 2.3
0.5
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
HD 010705-1/3
2SK3279
Specifications
Absolute Maximum ...
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