2SK2632LS

Ordering number:ENN5531B N-Channel Silicon MOSFET www.DataSheet4U.com 2SK2632LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2078B [2SK2632LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 Conditions 2.4 0.6 1.2 1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS Ratings 800 ±30 2.5 7.5 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=800V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.3A VGS=15V, ID=1.3A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 3.5 0.7 1.4 3.6 550 150 70 4.8 Conditions Ratings min 800 1.0 ±100 5.5 typ max Unit V mA nA V S Ω pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require...