MRF9002R2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. Freescale Semiconductor, Inc... CASE 978 - 03 PLASTIC PFP - 16 PIN CONNECTIONS N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C. 1 2 3 4 5 6 7 8 (Top View) NOTE: Exposed backside flag is source terminal for transistors. 16 15 14 13 12 11 10 9 DRAIN 1−1 DRAIN 1−2 DRAIN 2−1 DRAIN 2−2 N.C. DRAIN 3−1 DRAIN 3−2 N.C. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Di...