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MRW3005 Dataheets PDF



Part Number MRW3005
Manufacturers Motorola
Logo Motorola
Description MICROWAVE POWER TRANSISTORS
Datasheet MRW3005 DatasheetMRW3005 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRW3001/D Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5.0 Watts Power Gain — 5.0 to 7.0 dB Min Collector Efficiency — 30% Min • Gold Metallization for Improved Reliability • Diffused Ballast .

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Document
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRW3001/D Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5.0 Watts Power Gain — 5.0 to 7.0 dB Min Collector Efficiency — 30% Min • Gold Metallization for Improved Reliability • Diffused Ballast Resistors • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRW3001 MRW3003 MRW3005 5.0 – 7.0 dB 1.5 – 3.0 GHz 1.0 – 5.0 WATTS MICROWAVE POWER TRANSISTORS MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Operating Junction Temperature Storage Temperature Range Symbol VCBO VEBO TJ Tstg 3001 3003 45 3.5 200 – 65 to + 200 3005 Unit Vdc Vdc °C °C CASE 328A–03, STYLE 1 (GP–13) MRW3001, 3003, 3005 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, RF, Junction to Case Symbol RθJC 35 Max 17 8.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) (IC = 30 mA, VBE = 0) (IC = 50 mA, VBE = 0) Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0) (IC = 3.0 mA, IE = 0) (IC = 5.0 mA, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) MRW3001 MRW3003 MRW3005 V(BR)CES MRW3001 MRW3003 MRW3005 V(BR)CBO MRW3001 MRW3003 MRW3005 V(BR)EBO ICBO 45 45 45 3.5 — — — — — — — — — — — — — — 0.5 0.75 1.25 Vdc mAdc 50 50 50 — — — — — — Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) (IC = 300 mA, VCE = 5.0 V) (IC = 500 mA, VCE = 5.0 V) hFE MRW3001 MRW3003 MRW3005 10 10 10 — — — 120 120 120 (continued) — REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 © Motorola, Inc. 1994 MRW3001 MRW3003 MRW3005 2–1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) MRW3001 MRW3003 MRW3005 Cob — — — 3.5 5.7 8.4 4.0 7.0 10 pF FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) Collector Efficiency (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) GPB MRW3001 MRW3003 MRW3005 ηc MRW3001 MRW3003 MRW3005 ψ No Degradation in Output Power 30 30 30 — — — — — — 7.0 6.0 5.0 — — — — — — % dB Load Mismatch (VCE = 28 V, f = 3.0 GHz, Load VSWR = ∞:1, All Phase Angles) Pout = 1.0 W MRW3001 Pout = 3.0 W MRW3003 Pout = 5.0 W MRW3005 MRW3001 TYPICAL CHARACTERISTICS Psat, SATURATED OUTPUT POWER (WATTS) 2.5 Pout , OUTPUT POWER (WATTS) f = 1.5 GHz 2 GHz 2.3 GHz 3 GHz 1.5 2.5 Po(sat) 60 2 2 50.


SW-289 MRW3005 K25S


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