S DT 452AP
S amHop Microelectronics C orp. Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R OD...
S DT 452AP
S amHop Microelectronics C orp. Augus t , 2002
P -C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) TYP
ID
-5.3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
52 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable. S OT-223 P ackage.
D
D D G S OT-223
S
D G S OT-223 (J 23Z)
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit -30 20 -5.3 -16 5.3 3 0.08 -65 to 150
Unit V V A A A W W/ C C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
12 42
C /W C /W
S DT 452AP
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -10V, ID = - 5.3A
Min Typ C Max Unit
-30 -1
100
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ...