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SB20-05J Dataheets PDF



Part Number SB20-05J
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 50V/ 2A Rectifier
Datasheet SB20-05J DatasheetSB20-05J Datasheet (PDF)

Ordering number:EN2493 SB20-05J Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 2A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1178 [SB20-05J] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:Catho.

  SB20-05J   SB20-05J



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Ordering number:EN2493 SB20-05J Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 2A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1178 [SB20-05J] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:Cathode A:Anode SANYO:TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 50 55 Unit V V A A 50Hz, resistive load, Tc=116˚C 50Hz sine wave, 1 cycle 2 60 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditons IR=0.5mA, Tj=25˚C, * IF=1A, Tj=25˚C, * VR=25V, Tj=25˚C, * IF=2A, Tj=25˚C, *,–dIF/dt=10A/µs Junction-Case:Smoothed DC Ratings min 50 0.55 0.1 30 5.5 typ max Unit V V mA ns ˚C/W Note *:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 43098HA (KT)/N037AT, TS No.2493-1/3 SB20-05J No.2493-2/3 SB20-05J No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1998. Specifications and information herein are subject to change without notice. PS No.2493-3/3 .


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