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SB120-05R Dataheets PDF



Part Number SB120-05R
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 50V/ 12A Rectifier
Datasheet SB120-05R DatasheetSB120-05R Datasheet (PDF)

Ordering number :EN2495 SB120-05R Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 12A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1180 [SB120-05R] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=70ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:.

  SB120-05R   SB120-05R


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Ordering number :EN2495 SB120-05R Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 12A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1180 [SB120-05R] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=70ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:Cathode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surege Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings –50 –55 Unit V V A A 50Hz, resistive load, Tc=104˚C 50Hz sine wave, 1 cycle 12 120 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditions Ratings min –50 0.55 –0.6 70 2.2 typ max Unit V V mA ns IR=–3mA, Tj=25˚C* IF=6A, Tj=25˚C* VR=–25V, Tj=25˚C* IF=2A, Tj=25˚C*, –dIF/dt=10A/µs Junction-Case:Smoothed DC ˚C/W Note)*:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/D177AT, TS No.2495-1/3 SB120-05R No.2495-2/3 SB120-05R No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 1998. Specifications and information herein are subject to change without notice. PS No.2495-3/3 .


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