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SB10W05T Dataheets PDF



Part Number SB10W05T
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 50V/ 1A Rectifier
Datasheet SB10W05T DatasheetSB10W05T Datasheet (PDF)

Ordering number:EN4440A SB10W05T Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 1A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1254A [SB10W05T] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. trr Test Circuit SANYO:TP 1:Anode 2:Cathode 3:Anode 4:Cathod.

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Ordering number:EN4440A SB10W05T Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 1A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1254A [SB10W05T] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. trr Test Circuit SANYO:TP 1:Anode 2:Cathode 3:Anode 4:Cathode unit:mm 1257A [SB10W05T] Electrical Connection 1:Anode 2:Cathode 3:Anode 4:Cathode SANYO:TP-FA Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IO IFSM Tj Tstg 50Hz, resistor load, Tc=120˚C 50Hz, resistor load, Tc=116˚C, Total rating 50Hz sine wave, 1 cycle Conditions Ratings 50 55 1 2 10 –55 to +125 –55 to +125 Unit V V A A A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VR VF IR C trr Rth(j-a) Rth(j-c) IR=300µA IF=1A VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 90 6 52 10 Conditons Ratings min 50 0.55 80 typ max Unit V V µA pF ns ˚C/W ˚C/W SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 43098HA (KT)/53196GI/92793YH (KOTO) AX-8333 No.4440-1/3 SB10W05T No.4440-2/3 SB10W05T No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This ca.


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