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SB10-18K

Sanyo Semicon Device

180V/ 1A Rectifier

Ordering number:EN2835B SB10-18K Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 1A Rectifier Applications ·...


Sanyo Semicon Device

SB10-18K

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Description
Ordering number:EN2835B SB10-18K Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 1A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1199C [SB10-18K] Features · Low forward voltage (VF=0.85V max). · Fast reverse recovery time (trr=35ns max). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:Anode SANYO:TO-220MF Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 180 190 Unit V V A A 50Hz, resistive load, Tc=112˚C 50Hz sine wave, 1 cycle 1 30 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c IR=0.5mA, Tj=25˚C,* IF=0.4A, Tj=25˚C,* VR=90V, Tj=25˚C,* IF=2A, Tj=25˚C,*,–dIF/dt=10A/µs Conditons Ratings min 180 0.85 0.1 35 5.0 typ max Unit V V mA ns ˚C/W Junction-Case:Smoothed DC Note *: Value per element Electrical Connection 1:Anode 2:Cathode 3:Anode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 43098HA (KT)/O318TA, TS No.2835-1/3 SB10-18K No.2835-2...




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