Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode(Chopper Regulator)
Equivalent circuit
SAH02
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode
2
4
1
3
Application : ...
Equivalent circuit
SAH02
Silicon
PNP Epitaxial Planar
Transistor with Shottky Barrier Diode
2
4
1
3
Application : Chopper
Regulator
(Ta=25°C) SAH02 –10max –10max –30min 100min 150min –0.3max 100typ 45typ
30 min 0.55 max 15 typ
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg SAH02 –30 –30 –10 –3 –0.5 800(Ta=25°C) 125 –40 to +125 Unit V V V A A mW °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) fT COB VR VF
trr
External Dimensions PS Pack
2.54±0.25
Conditions VCB=–30V VEB=–10V IC=–10mA VCE=–2V, IC=–1A VCE=–2V, IC=–0.5A IC=–0.5A, IB=–20mA VCE=–12V, IE=0.3A VCB=–10V, f=1MHz
IR=100µA IF=0.5A IF=±100mA
Unit
µA
V
4
0.75 +0.15 -0.05
a
b
1
4.32±0.2
µA
3
2
4.8max
0.89±0.15
1.4±0.2 6.8max 3.6±0.2 4.0max
V MHz
0.25
8.0±0.5 6.3±0.2 0.3 +0.15 -0.05 0~0.1 1.0±0.3 3.0±0.2 9.8±0.3
pF
V V ns
Weight : Approx 0.23g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
–3
–100mA –20mA
Di ode I F – V F Characteristics
3
I C – V BE Temperature Characteristics (Typical)
–3 (V C E =–2V)
–15mA
Collector Current I C (A)
–2
–5m A
Forward Current I F (A)
–1 0m A
2
Collector Current I C (A)
–2
–5m A
) emp
mp) e Te
–30˚C
Cas
eT
–1
I B =–3mA
1
–1
˚C (
25
0
0
–1
–2
–3
–4
–5
–6
0
–3
12
0˚
0
0.5 Forward Voltage V F (V)
1.0
0
0
–0.5
125
5˚
˚C
C
C
25˚C
(Case
(Cas
Temp
–1.0
)
–1.5
Collector-Emitter Voltage V C E (V)
Base-Emittor Voltage V B E (V)
t on t stg t f – I C C...