High Brightness LED Lamp
Semiconductor
SB3317-G / SB3317-G(B)
High Brightness LED Lamp
Features
• Colorless transparency lens type • φ3mm(T-1) ...
Description
Semiconductor
SB3317-G / SB3317-G(B)
High Brightness LED Lamp
Features
Colorless transparency lens type φ3mm(T-1) all plastic mold type Super luminosity
Outline Dimensions
STRAIGHT TYPE
3.0±0.2
unit :
STOPPER TYPE
3.0±0.2
mm
5.3±0.2 2.9±0.2
5.3±0.2 2.9±0.2
5.2±0.5
0.4
23.0MIN
0.4
23.0MIN
1.0MIN 2.54 NOM 2.54 NOM
1.0MIN
1 2 3.8±0.2
3.6±0.2
1 2 3.8±0.2
3.6±0.2
PIN Connections 1.Anode 2.Cathode
KLB-2002-001
1
SB3317-G / SB3317-G(B)
Absolute maximum ratings
Characteristic
Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature
2 1
Symbol
PD IF IFP VR Topr Tstg Tsol
Ratings
80 20 50 4 -25∼85 -30∼100 260℃ for 5 seconds
Unit
mW mA mA V ℃ ℃
*1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic
Forward Voltage * Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current *3Half angle
4
Symbol
VF IV λP Δλ IR θ1/2
Test Condition
IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V IF= 20mA
Min.
520 -
Typ.
3.4 1000 468 26 ±22
Max.
4.0 1760 10 -
Unit
V mcd nm nm uA deg
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18% *4. Luminous Intensity classification P 520 ~ 780 Q 780 ~ 1170 R 1170 ~ 1760
KLB-2002-001
2
SB3317-G / SB3317-G(B)
Characteristi...
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