SI7356DP

N-Channel 30-V (D-S) MOSFET Si7356DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.004 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 45 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7356DP-T1 Si7356DP-T1—E3 (Lead (Pb)-Free) FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Low-Side DC/DC Conversion – Notebook – Server – Workstation D Point-of-Load Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 30 18 25 15 70 4.5 1.8 5.4 1.9 3.4 1.2 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72222 S-41905—Rev. C, 14-Oct-04 Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W www.vishay.com 1 Si7356DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTE...