SI6875DQ

Si6875DQ New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET, Common Drain PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = –4.5 V –20 20 0.036 @ VGS = –2.5 V 0.052 @ VGS = –1.8 V ID (A) –6.4 –5.5 –4.6 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6875DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs –20 "8 –6.4 –5.1 –30 –1.6 1.78 1.14 Steady State Unit V –5.2 –4.1 A –1.08 1.19 0.76 –55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71230 S-01235—Rev. A, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 85 35 Maximum 70 105 45 Unit _C/W 2-1 Si6875DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V,...