SI6801DQ

Si6801DQ Vishay Siliconix N- and P-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) 0.160 @ VGS = 4.5 V 0.260 @ VGS = 3.0 V 0.190 @ VGS = –4.5 V 0.280 @ VGS = –3.0 V ID (A) "1.9 "1.5 "1.7 "1.3 TSSOP-8 D1 1 D S1 2 S1 3 Si6801DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 –20 "12 "1.9 "1.7 "1.5 "1.3 "8 1.0 –1.0 1.0 0.64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Parameter Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70187 S-56944—Rev. D, 23-Nov-98 Symbol RthJA N- or P-Channel 125 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si6801DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance...