MOSFET
Si6544BDQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.0...
Description
Si6544BDQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.032 at VGS = 10 V 0.046 at VGS = 4.5 V
P-Channel
- 30
0.043 at VGS = - 10 V 0.073 at VGS = - 4.5 V
ID (A) 4.3 3.7 - 3.8 - 2.8
FEATURES
Halogen-free TrenchFET® Power MOSFETS
RoHS
COMPLIANT
D1 S2
TSSOP-8
D1 1 S1 2 S1 3 G1 4
Top View
8 D2 7 S2 6 S2 5 G2
Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
S1 N-Channel MOSFET
G2
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel 10 s Steady State
P-Channel 10 s Steady State
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
4.3 3.5
3.7
- 3.8
- 3.8
3.0
- 3.0
- 2.6
Pulsed Drain Current
IDM 20
- 20
Continuous Source Current (Diode Conduction)a
IS
1.0
0.7
- 1.0
- 0.7
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
1.14 0.73
0.83 0.53
1.14 0.73
0.83 0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t ≤ 10 s Steady State
Maximum Junction-to-Foot (Drain)
Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol RthJA RthJF
Typical 88 120 65
Maximum 110 150 80
Unit °C/W
Document Number: 72244 S-81056-Rev. B, 12-May-08
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Si6544BDQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unl...
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- SI6544BDQ MOSFET - Vishay Siliconix