Dual P-Channel MOSFET
Dual P-Channel 1.8 V (G-S) MOSFET
Si5935DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.086 at VGS = ...
Description
Dual P-Channel 1.8 V (G-S) MOSFET
Si5935DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V
ID (A) - 4.1 - 3.4 - 2.9
1206-8 ChipFET®
1 S1 D1 G1 D1 S2 D2 G2
D2
Marking Code
DF XX Lot Traceability and Date Code
Part # Code
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs
Low RDS(on) Dual and Excellent Power Handling in a Compact Footprint
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch PA Switch Battery Switch
S1
S2
G1 G2
Bottom View
Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free) Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c
TA = 25 °C TA = 85 °C
TA = 25 °C TA = 85 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
- 20
±8
- 4.1
-3
- 2.9
- 2.2
- 15
- 1.8
- 0.9
2.1 1.1
1.1 0.6
- 55 to 150
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t≤5s Steady State
RthJA
50 90
60 110 °C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
...
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