SI5855DC

Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = - 4.5 V - 20 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V at 1 A IF (A) 1.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Ultra Low Vf Schottky Si5853DC Pin Compatible Compliant to RoHS Directive 2002/95/EC APPLICATIONS Charging Circuit in Portable Devices 1206-8 ChipFET® 1 A KA K D D S G Marking Code JB XXX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S G K D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage (MOSFET) VDS - 20 Reverse Voltage (Schottky) VKA 20 V Gate-Source Voltage (MOSFET) VGS ±8 Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 25 °C TA = 85 °C ID - 3.6 - 2.6 - 2.7 - 1.9 Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a IDM - 10 IS - 1.8 - 0.9 A Average Forward Current (Schottky) IF 1.0 Pulsed Forward Current (Schottky) IFM 7 Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C PD 2.1 1.1 1.9 1.0 1.1 0.6 W 1.1 0.56 Operating...