SI4982DY

Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.150 at VGS = 10 V 0.180 at VGS = 6 V ID (A) 2.6 2.4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 2.6 2.1 20 1.7 2.0 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA Limit 62.5 Unit V A W °C Unit °C/W Document Number: 70748 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4982DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica Gate Charge Gate-Source Charg...