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SI4967DY

Dual P-Channel MOSFET

Description

Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = - 4.5 V - 12 0.030 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 7.5 - 6.7 - 5.4 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 ...

Vishay Siliconix

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SI4967DY Dual P-Channel MOSFET - Vishay Siliconix

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