SI4966DY

Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V ID (A) ± 7.1 ± 6.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 20 ± 12 ± 7.1 ± 5.7 ± 40 1.7 2 1.3 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Symbol RthJA For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm. Limit 62.5 Document Number: 70718 S09-0869-Rev. D, 18-May-09 Unit V A W °C Unit °C/W www.vishay.com 1 Si4966DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate ...