Dual N-Channel MOSFET
Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.025 at VGS = 4....
Description
Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V
ID (A) ± 7.1 ± 6.0
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source Current (Diode Conduction)a
IS
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 20 ± 12
± 7.1 ± 5.7 ± 40 1.7
2 1.3 - 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol RthJA
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm.
Limit 62.5
Document Number: 70718 S09-0869-Rev. D, 18-May-09
Unit V A W °C
Unit °C/W
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Si4966DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate ...
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