SI4931DY

Dual P-Channel 12-V (D-S) MOSFET Si4931DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.018 at VGS = - 4.5 V - 12 0.022 at VGS = - 2.5 V 0.028 at VGS = - 1.8 V ID (A) - 8.9 - 8.1 - 3.6 SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 8.9 - 7.1 - 6.7 - 5.4 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 46 80 24 Maximum 62.5 110 32 Unit °C/W Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 1 Si4931DY Vishay Siliconix SPECIFICATIONS TJ...