Dual N-Channel MOSFET
New Product
Si4922DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.016...
Description
New Product
Si4922DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V 0.024 @ VGS = 2.5 V
ID (A)
8.8 8.3 7.2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1 D1
D2 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
30 "12 8.8 6.7 7.1 5.3 "30 1.7 0.9 2.0 1.1 1.3 0.7 β55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes a. Surface Mounted on 1β x 1β FR4 Board.
Document Number: 71309 S-20112βRev. B, 11-Mar-02
t v ...
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