Dual P-Channel MOSFET
New Product
Dual P-Channel 30-V (D-S) MOSFET
Si4921DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 30 0.0...
Description
New Product
Dual P-Channel 30-V (D-S) MOSFET
Si4921DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 30 0.025 at VGS = - 10 V 0.042 at VGS = - 4.5 V
ID (A) - 7.3 - 5.6
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4921DY-T1 Si4921DY-T1-E3 (Lead (Pb)-free)
FEATURES TrenchFET® Power MOSFET Advanced High Cell Density Process
APPLICATIONS Load Switches
- Notebook PCs - Desktop PCs - Game Stations Battery Switch
S1 S2
Pb-free Available
RoHS*
COMPLIANT
G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 7.3 - 5.8
- 5.5 - 4.4
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.0 1.3
1.1 0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec Steady State Steady State
Symbol RthJA RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72109 S-61006-Rev. B, 12-Jun-06
Typical 46 80 24
Maximum 62.5 110 32
Unit °C/W
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Si4921DY
Vishay Silico...
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